Mask for X-ray lithography

Details Mask for X-ray lithography Mask for X-ray lithography

1990-01-29

1991-07-23

Hannaher, Constantine

X-ray or gamma ray systems or devices

Specific application

Lithography

378 34, 378 62, G21K 500, G01N 2304

Patent

active

050349716

ABSTRACT:
In composition of a mask for X-ray lithography made up of a substrate and one or more metallic pattern layer of high soft X-ray absorption, conventional ceramic for the substrate is replaced by Be. High X-ray permeability of Be allows use of a thick construction for the substrate, thereby raising mechanical properties of the mask and assuring clear contrast in X-ray exposure of resist. Closeness in thermal expansion between the substrate and the pattern layer precludes the danger of undesirable separation, warping and breakage.

REFERENCES:
patent: 4536882 (1985-08-01), Jones et al.
patent: 4735877 (1988-04-01), Kato et al.

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