Mask for silicon crystallization, method of forming...

Details Mask for silicon crystallization, method of forming... Mask for silicon crystallization, method of forming...

2009-03-19

2011-11-08

Kunemund, Bob M (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from solid or gel state

C117S008000, C438S030000

Reexamination Certificate

active

08052790

ABSTRACT:
A silicon crystallization mask of the present invention includes; a main exposure portion including a plurality of complete light transmission regions which completely transmit light therethrough, and a preliminary exposure portion including a plurality of incomplete light transmission regions, which each partially transmit light therethrough, wherein at least two of the incomplete light transmission regions have different magnitudes of light transmittance from each other.

REFERENCES:
patent: 7384476 (2008-06-01), You
patent: 2005/0142680 (2005-06-01), Ha et al.

Affiliated with

Also associated with

Rating

Mask for silicon crystallization, method of forming... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Mask for silicon crystallization, method of forming..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mask for silicon crystallization, method of forming... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4276129