Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2011-02-22
2011-02-22
Huff, Mark F (Department: 1721)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C117S043000
Reexamination Certificate
active
07892704
ABSTRACT:
A mask for silicon crystallization capable of minimizing the number of grain boundaries in crystallized silicon, a method for crystallizing silicon using the mask, and a display device are presented. The mask includes a group of slits that are inclined at a predetermined angle with respect to a scan direction and a group of slits including slits inclined at a predetermined angle with respect to the former group of slits. The groups of slits are separated by an interval along the scan direction, and the substrate and/or mask is moved by the interval between irradiation by laser through the slits. Further, there are provided a method for crystallizing silicon using the mask and a display device. By reducing the number of grain boundaries that extend horizontally or vertically on the substrate, the invention obviates a design limitation associated with the directional anisotropy in sequential lateral solidification (SLS) technique.
REFERENCES:
patent: 6521473 (2003-02-01), Jung
patent: 6706545 (2004-03-01), Jung
patent: 2004/0235277 (2004-11-01), Crowder
patent: 2005/0173752 (2005-08-01), Chung et al.
patent: 2006/0154154 (2006-07-01), Sun
patent: 00/14784 (2000-03-01), None
Joo Soong Yong
Kang Myung Koo
Huff Mark F
Innovation Counsel LLP
Jelsma Jonathan
Samsung Electronics Co,. Ltd.
LandOfFree
Mask for silicon crystallization, method for crystallizing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Mask for silicon crystallization, method for crystallizing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mask for silicon crystallization, method for crystallizing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2634075