Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2006-07-31
2010-02-23
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S166000, C257SE21134, C430S005000, C117S008000, C117S010000
Reexamination Certificate
active
07666767
ABSTRACT:
A mask for sequential lateral solidification (SLS) process with at least one transparency region is provided. The transparent region is defined by two lengthwise edges, a front edge, and a rear edge. The two lengthwise edges also define a quadrilateral. The front edge is located outside the quadrilateral, and the rear edge is located inside the quadrilateral.
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AU Optronics Corp.
Birch & Stewart Kolasch & Birch, LLP
Wilczewski M.
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