Mask for reducing proximity effect

Details Mask for reducing proximity effect Mask for reducing proximity effect

2006-01-03

2006-01-03

Siek, Vuthe (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

C716S030000, C430S005000, C430S296000, C430S311000, C430S394000

Reexamination Certificate

active

06983444

ABSTRACT:
The present invention discloses a mask for reducing the proximity effect. The mask comprises a plurality of line-shaped features, a plurality of first assist features positioned between the line-shaped features and a plurality of second assist features positioned between the line-shaped feature and the first assist feature. The line-shaped feature corresponds to isolation trenches to be formed on a silicon wafer. The first assist feature is rectangular in shape and has a larger width at the direction perpendicular to the line-shaped features. The width of the second assist feature is smaller than two-fifths of the wavelength but larger than one-fourth of the wavelength of an exposure source. The size of the first assist feature and the second assist feature is so designed to be non-resolvable, while the line-shaped feature is resolvable and transferred to the silicon wafer.

REFERENCES:
patent: 5242770 (1993-09-01), Chen et al.
patent: 5636002 (1997-06-01), Garofalo
patent: 6165693 (2000-12-01), Lin et al.
patent: 6627361 (2003-09-01), Bula et al.
patent: 2002/0192570 (2002-12-01), Smith

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