Mask for polycrystallization and method of manufacturing...

Details Mask for polycrystallization and method of manufacturing... Mask for polycrystallization and method of manufacturing...

2006-03-14

2006-03-14

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C438S149000, C438S150000, C438S166000, C438S308000, C438S487000

Reexamination Certificate

active

07011911

ABSTRACT:
In a method of manufacturing a thin film transistor according to the present invention, an amorphous silicon thin film is firstly formed on an insulating substrate and a planarization layer is formed thereon. Thereafter, the amorphous silicon thin film is crystallized by a solidification process using a laser-irradiation to form a polysilicon thin film. Next, the polysilicon thin film and the planarization layer are patterned to form a semiconductor layer, and a gate insulating layer covering the semiconductor layer is formed. Then, a gate electrode is formed on the gate insulating layer opposite the semiconductor layer. Next, impurities are implanted into the semiconductor layer to form a source region and a drain region opposite each other with respect to the gate electrode, and a source electrode and a drain electrode electrically connected to the source region and the drain region, respectively, are formed.

REFERENCES:
patent: 5914202 (1999-06-01), Nguyen et al.

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