Mask for photolithography, method of forming thin film,...

Details Mask for photolithography, method of forming thin film,... Mask for photolithography, method of forming thin film,...

2006-12-26

2006-12-26

McPherson, John A. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S321000, C430S396000

Reexamination Certificate

active

07153614

ABSTRACT:
A mask for photolithography in which a semi-transmission film is formed so that the phase difference of lights passing through a semi-transmission portion and a transmission portion of the mask for photolithography is between (−¼+2 m).π and (¼+2 m).π inclusive, where m is an integer. The invention makes it possible to efficiently and properly form a thin film having a multi-step structure by a single process.

REFERENCES:
patent: 2000-075305 (2000-03-01), None

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