Mask for exposing wafer with radiation and its exposing method

X-ray or gamma ray systems or devices – Specific application – Lithography

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378 34, G21K 500

Patent

active

051154560

ABSTRACT:
A mask for exposing a wafer with radiation and its exposition method in which the radiation exposure mask is provided with at least two radiation exposure windows which each include a mask pattern of a smaller pattern area obtained by dividing a pattern area constituting an integrating circuit chip into a plurality of the areas, and a semiconductor wafer is exposed with radiation while the radiation exposure mask is intermittently moved by a distance of the size of the small pattern area.

REFERENCES:
patent: 3742230 (1973-06-01), Spears et al.
patent: 3873824 (1975-03-01), Bean et al.
patent: 3974382 (1976-08-01), Bernacki
patent: 4260670 (1981-04-01), Burns
patent: 4301237 (1981-11-01), Burns
patent: 4881257 (1989-11-01), Nakagawa

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