Mask for crystallizing and method of crystallizing amorphous...

Details Mask for crystallizing and method of crystallizing amorphous... Mask for crystallizing and method of crystallizing amorphous...

2007-07-31

2007-07-31

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S531000, C257SE21134

Reexamination Certificate

active

11004102

ABSTRACT:
A method of crystallizing amorphous silicon using a mask having a transmitting portion including a plurality of stripes, wherein end lines of at least two stripes are not collinear; and a blocking portion enclosing the plurality of stripes includes the steps of setting the mask over a substrate having an amorphous silicon layer, applying a first laser beam to a first area of the amorphous silicon layer through the mask, thereby forming a first crystallization region, moving the substrate in a first direction, thereby disposing the blocking portion of the mask over the first crystallization region, and applying a second laser beam to the first area of the amorphous silicon layer through the mask, thereby forming a second crystallization region.

REFERENCES:
patent: 6117752 (2000-09-01), Suzuki
patent: 6767804 (2004-07-01), Crowder
patent: 2003/0199176 (2003-10-01), Adachi et al.
patent: 2000-0001170 (2000-01-01), None

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