Mask fabrication process

Details Mask fabrication process Mask fabrication process

1998-03-26

2000-01-18

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

060156406

ABSTRACT:
A method for fabricating masks and reticles useful for projection lithography systems. An absorber layer is conventionally patterned using a pattern and etch process. Following the step of patterning, the entire surface of the remaining top patterning photoresist layer as well as that portion of an underlying protective photoresist layer where absorber material has been etched away is exposed to UV radiation. The UV-exposed regions of the protective photoresist layer and the top patterning photoresist layer are then removed by solution development, thereby eliminating the need for an oxygen plasma etch and strip and chances for damaging the surface of the substrate or coatings.

REFERENCES:
patent: 5304437 (1994-04-01), Tennant
patent: 5521031 (1996-05-01), Tennant et al.
D. M. Tennant et al., "Reflective Mask Technologies and Imaging Results in Soft X-ray Projection Lithography", J. Vac. Sci. Technol., B9, 3176, 3183, 1991.
A. M. Hawryluk et al., "Applications of Microfabrication Technology to X-ray Laser Cavities", J. Vac. Sci. Technol., B6, 2153, 2157, 1988.
A. M. Hawryluk et al., "Reflection Mask Technology for X-ray Projection Lithography", J. Vac. Sci. Technol., B7, 1702, 1704, 1969.

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