Mask defect repair system and method which controls a dose of a

Details Mask defect repair system and method which controls a dose of a Mask defect repair system and method which controls a dose of a

1998-06-04

2000-02-22

Boudreau, Leo H.

Image analysis

Applications

Manufacturing or product inspection

430 5, 430 30, G06K 900

Patent

active

060289538

ABSTRACT:
A mask defect repair system which repairs, by irradiating a particle beam, a defect on a mask made of a transparent substrate and a mask material formed on the substrate, includes an imaging beam irradiation unit for two-dimensionally scanning and irradiating the beam for imaging on a surface of the mask, a detector for detecting a first intensity distribution of secondary particles emitted from the surface of the mask by irradiation of the beam for imaging, an image processing unit for performing image processing of at least part of the first intensity distribution of the secondary particles to prepare a second intensity distribution, an image display unit for displaying the first and second intensity distributions as an image, an external input unit for setting, on the image, a desired region to be processed with the beam, an irradiation region determination unit for determining, on the desired region to be processed, a beam irradiation region on the basis of the second intensity distribution, a repair beam irradiation unit for irradiating the beam for a defect repair on the beam irradiation region, and a gas supply unit for supplying an etching gas or a deposition gas to the surface of the mask.

REFERENCES:
patent: 4751169 (1988-06-01), Behringer et al.
patent: 5272116 (1993-12-01), Hosono
patent: 5382484 (1995-01-01), Hosono
patent: 5464713 (1995-11-01), Yoshioka et al.
patent: 5481624 (1996-01-01), Kamon
patent: 5591970 (1997-01-01), Komano et al.
patent: 5798193 (1998-08-01), Pierrat et al.
"Mask and Circuit Repair With Focused-Ion Beams," T.D. Cambria et al. Solid State Technolgy; Sep. 1987 pp. 133-136.

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