Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2011-01-18
2011-01-18
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S486000, C438S048000, C438S128000, C438S149000, C438S151000, C438S166000, C438S795000, C257SE21134, C257S072000, C257S059000, C257S347000, C257S350000, C257S066000, C257SE33053, C257SE27059, C257SE29002, C430S005000
Reexamination Certificate
active
07871907
ABSTRACT:
A mask includes a primary opaque pattern and a number of clusters of secondary opaque patterns. The primary opaque pattern defines a number of strip transparent slits whose extending directions are substantially the same. The clusters of the secondary opaque patterns are connected to the primary opaque pattern, and each of the clusters of the secondary opaque patterns is disposed in one of the transparent slits, respectively. Each of the clusters of the secondary opaque patterns includes a number of secondary opaque patterns, and extending directions of at least a portion of the secondary opaque patterns and the extending directions of the transparent slits together form included angles that are not equal to about 90°.
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“Office Action of Taiwan Counterpart Application” issued on Apr. 12, 2010, p. 1-p. 4.
Au Optronics Corporation
Jianq Chyun IP Office
Singal Ankush k
Toledo Fernando L
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