Mask and method for fabricating semiconductor device using...

Details Mask and method for fabricating semiconductor device using... Mask and method for fabricating semiconductor device using...

2009-08-19

2011-11-29

Roman, Angel (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21294, C430S005000

Reexamination Certificate

active

08067311

ABSTRACT:
A mask for forming a metal line and a via contact, and a method for fabricating a semiconductor device using the same, minimizes misalignment. The mask includes a first mask region having a dark tone for light shading, a second mask region having a half tone, being disposed within the first mask region to form the metal line, and a third mask region having a clear tone, being disposed within the second mask region to form the via contact.

REFERENCES:
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patent: 2002/0058401 (2002-05-01), Kim
patent: 2005/0112957 (2005-05-01), Yang et al.
patent: 2008/0090159 (2008-04-01), Yoshikawa et al.
patent: 2009/0108454 (2009-04-01), Lee
patent: 2010/0003823 (2010-01-01), Chen et al.
patent: 2010/0136781 (2010-06-01), Kulkarni et al.
patent: 10-2002-0054642 (2002-07-01), None
patent: 10-2003-0066999 (2003-08-01), None

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