Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2005-12-14
2008-11-11
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S030000, C438S384000, C438S758000, C257SE31041, C257SE29117, C257SE27100
Reexamination Certificate
active
07449352
ABSTRACT:
An exposure mask is provided, which includes: a light blocking opaque area blocking incident light; a translucent area; and a transparent area passing the most of incident light, wherein the translucent area generates the phase differences in the range of about −70° to about +70°.
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Han Ji-Haeng
Jung Bae-Hyoun
Jung Young-Bae
Kim Jong-An
Lindsay, Jr. Walter
McPherson Kwok Chen & Heid LLP
Mustapha Abdulfattah
Samsung Electronics Co,. Ltd.
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