Mask and manufacturing method of a semiconductor device and...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

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Details

C438S030000, C438S384000, C438S758000, C257SE31041, C257SE29117, C257SE27100

Reexamination Certificate

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07449352

ABSTRACT:
An exposure mask is provided, which includes: a light blocking opaque area blocking incident light; a translucent area; and a transparent area passing the most of incident light, wherein the translucent area generates the phase differences in the range of about −70° to about +70°.

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