Mark protection scheme with no masking

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature

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438462, 438800, H01L 2176

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active

06057206&

ABSTRACT:
A method of forming an alignment mark protection structure is disclosed and includes forming an alignment mark protection layer over a substrate which has an alignment mark associated therewith. The method also includes forming a negative photoresist layer over the alignment mark protection layer and removing a portion of the negative photoresist layer which does not overlie the alignment mark. The removal exposes a portion of the alignment mark protection layer which does not overlie the alignment mark and the exposed portion of the alignment mark protection layer is then removed. Preferably, the removal of a portion of the negative photoresist includes selectively exposing a peripheral portion thereof using an edge-bead removal tool, thereby allowing for the formation of an alignment mark protection structure without an extra masking step.

REFERENCES:
patent: 4732785 (1988-03-01), Brewer
patent: 5578517 (1996-11-01), Yoo et al.
patent: 5879577 (1999-03-01), Weng et al.
patent: 5923996 (1999-07-01), Shih et al.
patent: 5965927 (1998-09-01), Lee et al.
"Product Lines", Tel Products, dated Jul. 16, 1999, from the Internet address: http://www.telusa,com/overview.html, 2 pages.

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