Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Warping of semiconductor substrate
Reexamination Certificate
2008-09-23
2008-09-23
Dang, Phuc T (Department: 2892)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Warping of semiconductor substrate
C438S455000, C257S018000
Reexamination Certificate
active
11203547
ABSTRACT:
A method for forming a strained silicon layer of semiconductor material. The method includes providing a deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. A backing plate is coupled to the deformable surface region to cause the deformable surface region to be substantially non-deformable. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside. The method includes a step of overlying the face of the second substrate on a portion of the face of the first substrate to cause a second bend within the thickness of material to form a second strain within a portion of the second thickness. A step of joining the face of the second substrate to the face of the first substrate form a sandwich structure while maintaining the first bend in the first substrate and the second bend in the second substrate. Preferably, joining occurs using a low temperature process such as plasma activated bonding or the like.
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Henley Francois J.
Kirk Harry R.
Dang Phuc T
Silicon Genesis Corporation
Townsend and Townsend / and Crew LLP
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