Manufacturing process of thin film transistor

Details Manufacturing process of thin film transistor Manufacturing process of thin film transistor

2008-12-18

2010-02-23

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257S021000

Reexamination Certificate

active

07666725

ABSTRACT:
A thin film transistor includes a gate, a gate insulator layer, a channel layer, a source, a drain, and an ohmic contact layer. The gate insulator layer covers the gate; the channel layer is disposed on the gate insulator layer above the gate; the source and the drain are disposed on the channel layer; the ohmic contact layer is disposed between the channel layer and the source and drain. The ohmic contact layer is constituted by a number of film layers. As mentioned above, the thin film transistor has an ohmic contact layer constituted by a number of film layers. When the thin film transistor is turned off, the current leakage thereof is lowered than that of a conventional thin film transistor.

REFERENCES:
patent: 5981972 (1999-11-01), Kawai et al.

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