Manufacturing process of strain gauge sensor using the piezoresi

Details Manufacturing process of strain gauge sensor using the piezoresi Manufacturing process of strain gauge sensor using the piezoresi

1997-03-24

1999-12-14

Fahmy, Wael

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

438 50, 438 53, 438455, 438456, 438753, 438733, 438973, 148DIG159, 257417, 257419, 257420, H01L 2100

Patent

active

060016663

ABSTRACT:
This invention relates to the manufacture of a strain gauge sensor using the piezoresistive effect, comprising a structure (1) made of a monocrystalline material acting as support to at least one strain gauge (2) made of a semiconducting material with a freely chosen doping type. The strain gauge (2) is an element made along a crystallographic plane determined to improve its piezoresistivity coefficient. The structure (1) is a structure etched along a crystallographic plane determined to improve its etching. The strain gauge (2) is fixed to the structure (1) by bonding means capable of obtaining said sensor.

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