Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1983-03-11
1984-11-20
Bernstein, Hiram H.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156DIG70, C30B 2702, H01L 2118
Patent
active
044837356
ABSTRACT:
The present invention relates to the manufacturing process of semi-insulating gallium arsenide single crystal by pulling a seed crystal contacted with gallium arsenide melt which is obtained by heat-reacting gallium and arsenic in a crucible contained in a pressure container and is characteristic in providing a film layer of 8-20 mm thickness of melted boron oxide with less than 200 ppm water content under pressure controlled at 60 kg/cm.sup.2 and over during reaction and at 5-40 kg/cm.sup.2 during crystal growth in high purity inert gas atmosphere, and during said crystal growth, rotating said seed crystal and said crucible in the same direction, but said seed crystal being rotated 5-30 rpm faster than the said crucible, and setting the crystal growing plane of said seed crystal to be within .+-.3.degree. from {100} plane.
REFERENCES:
patent: 4299651 (1981-11-01), Bonner
"Growth and Characterization of Large Diameter Undoped Semi-Insulating GaAs for Direct Ion Implanted FET Technology", Thomas et al., Solid State Electronics, vol. 24, 1981, pp. 387-399.
Fukumoto Masashi
Inada Tomoki
Mizuniwa Seiji
Nakagawa Junkichi
Toyoshima Toshiya
Bernstein Hiram H.
Carrier Joseph P.
Hitachi Cable Ltd.
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