Manufacturing process of a semiconductor device

Details Manufacturing process of a semiconductor device Manufacturing process of a semiconductor device

1997-08-25

2001-12-11

Everhart, Caridad (Department: 2825)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S633000, C438S692000, C438S638000

Reexamination Certificate

active

06329284

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a manufacturing method of a semiconductor device, and more particularly to a method of forming electrode wires on an insulating layer of the semiconductor device.
2. Description of the Background Art
In recent years, with micronization of semiconductor devices, a size of a connection hole formed in an insulating layer for electrical connection, between first and second conductive layers, is also micronized. The electrical connection is between a first conductive layer, which is a conductive diffused layer on a principal plane of a semiconductor substrate or a metal film on a semiconductor element, etc., and a second conductive layer, which is a metal film, etc. located on an upper side of the insulating layer.
With such a micronization of a connection hole, an aspect ratio of a connection hole (ratio of height to diameter of a connection hole) is increased. To meet this situation, an attempt has been proposed to achieve an electrical connection between the first conductive layer and second conductive layer, in which the second conductive layer is formed by sputtering and a space in the connection hole is closed by the second conductive layer and is then buried under an atmosphere of high temperature and high pressure.
For example, the Japanese Laid-Open Patent Publication (unexamined) Toku-Hyou-Hei 7-503106 discloses a manufacturing process of a semiconductor device including the steps of closing an upper part of a space in the internal part of a connection hole with a second conductive layer formed by sputtering while leaving the internal space, and burying the second conductive layer into the connection hole, whereby an electrical connection between the first conductive layer and the second conductive layer is achieved. This prior manufacturing process is hereinafter discussed more specifically with reference to
FIG. 10
to FIG.
14
.
First, as illustrated in
FIG. 10
, a first conductive layer
11
is formed on the upper part of a semiconductor element
10
, an insulating layer
12
is further formed thereon, and a connection hole
13
is formed in the insulating layer
12
.
Then, as illustrated in
FIG. 11
, a second conductive layer
14
is deposited by sputtering on the insulating layer
12
and in the internal part of the connection hole
13
. At this time, as illustrated in
FIG. 11
, a thickness of the second conductive layer
14
deposited on the side wall
13
a
and on the bottom face
13
b
of the connection hole
13
is small as compared with that of the second conductive layer
14
coating the surface of the insulating layer
12
. While continuing the deposition of the second conductive layer
14
, a gap
15
of the second conductive layer
14
on the connection hole
13
is narrowed.
When further continuing the deposition of the second conductive layer
14
by sputtering, as illustrated in
FIG. 12
, the gap
15
of the second conductive layer on the connection hole
13
comes to be closed while a hollow space
16
being left in the internal part of the connection hole
13
comes to be closed while a hollow space
16
is left in the internal part of the connection hole
13
.
Then, on maintaining the semiconductor device in an atmosphere of high pressure, the second conductive layer
14
is buried into the connection hole
13
until a state illustrated in
FIG. 13
is achieved.
Further, as illustrated in
FIG. 14
, a conductive wire
17
is formed by etching the second conductive layer
14
.
In the above-mentioned manufacturing process of a semiconductor device, the upper part of the hollow space
16
is closed with the second conductive layer
14
formed by sputtering while leaving the hollow space
16
in the internal part of the connection hole. Thereafter, the second conductive layer
14
is buried into the connection hole
13
by applying a high temperature and a high pressure, by which an electrical connection can be established between the first conductive layer
11
and the second conductive layer
14
through the connection hole
13
.
However, in the mentioned manufacturing process of a semiconductor device, a problem exists in that etching is required to form the conductive wire
17
formed from the second conductor
14
, and the conductive wire
17
formed by etching may be defective and is of a low yield.
SUMMARY OF THE INVENTION
The present invention was made to solve the above-stated problems and it is an object of the present invention to provide a novel manufacturing process of a semiconductor device having connecting electrode wires with less defects and with a high yield.
An aspect of the present invention is a manufacturing process of a semiconductor device which includes a step of forming an insulating layer on a semiconductor substrate or on a semiconductor element formed on the semiconductor substrate. A groove having a connection hole at a bottom part thereof is formed, if required, in the insulating layer. An electrical conductor is formed along the surface of the groove and on the insulating layer. The conductor is buried into the groove by applying a high temperature and a high pressure to the conductor and an electrode wire is formed of the conductor by removing a part of the conductor by the CMP method.
Another aspect of the present invention is a manufacturing process of a semiconductor device which includes a step of forming an insulating layer on a semiconductor substrate or on a semiconductor element formed on the semiconductor substrate. A groove having a connection hole is formed at a bottom part thereof, if required, in the insulating layer. An electrical conductor is formed along the surface of the groove and the insulating layer. The conductor is buried into the groove by applying a temperature of 300 to 850° C. and a pressure of 500 to 900 bar to the conductor and an electrode wire is formed of the conductor by removing a part of the conductor by the CMP method.


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