Manufacturing process for a high voltage transistor...

Details Manufacturing process for a high voltage transistor... Manufacturing process for a high voltage transistor...

2005-09-27

2005-09-27

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S197000

Reexamination Certificate

active

06949803

ABSTRACT:
A process for fabricating high-voltage drain-extension transistors, whereby the transistors are integrated in a semiconductor substrate along with non-volatile memory cells that include floating gate transistors. The process includes: defining respective active areas for HV transistors and floating gate transistors in a semiconductor substrate, with the active areas separated from each other by insulating regions; forming insulated gate regions of the HV transistors; performing a first dopant implantation to form first portions of the HV transistor junctions; conformably depositing a dielectric layer onto the whole substrate to provide an interpoly layer of the floating gate transistor; making openings at the first portions of the HV transistor junctions; performing, through the openings, a second dopant implantation to form second portions of the high-voltage transistor junctions, with perimeter areas of the gate regions and the active area of the floating gate transistor being screened off by the dielectric layer.

REFERENCES:
patent: 5017985 (1991-05-01), Lin
patent: 5449637 (1995-09-01), Saito et al.
patent: 5622886 (1997-04-01), Allum et al.
patent: 6159795 (2000-12-01), Higashitani et al.
patent: 6190983 (2001-02-01), Tsai
patent: 6268633 (2001-07-01), Pio et al.
patent: 6278163 (2001-08-01), Pio et al.
patent: 6448593 (2002-09-01), Higashitani et al.
patent: 6822289 (2004-11-01), Kozuka et al.
patent: 2001/0019157 (2001-09-01), Pio et al.
patent: 9-283643 (1997-10-01), None
patent: WO 00/31793 (2000-06-01), None

Affiliated with

Also associated with

Rating

Manufacturing process for a high voltage transistor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing process for a high voltage transistor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing process for a high voltage transistor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3449201