Manufacturing process and structure of through silicon via

Details Manufacturing process and structure of through silicon via Manufacturing process and structure of through silicon via

2011-07-05

2011-07-05

Monbleau, Davienne (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S698000, C257S773000, C257S774000, C257SE23169, C438S637000, C438S638000, C438S640000

Reexamination Certificate

active

07973415

ABSTRACT:
A through silicon via reaching a pad from a second surface of a semiconductor substrate is formed. A penetration space in the through silicon via is formed of a first hole and a second hole with a diameter smaller than that of the first hole. The first hole is formed from the second surface of the semiconductor substrate to the middle of the interlayer insulating film. Further, the second hole reaching the pad from the bottom of the first hole is formed. Then, the interlayer insulating film formed on the first surface of the semiconductor substrate has a step shape reflecting a step difference between the bottom surface of the first hole and the first surface of the semiconductor substrate. More specifically, the thickness of the interlayer insulating film between the bottom surface of the first hole and the pad is smaller than that in other portions.

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