Manufacturing process and structure of power junction field...

Details Manufacturing process and structure of power junction field... Manufacturing process and structure of power junction field...

2007-05-08

2007-05-08

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C257SE21008, C257S421000

Reexamination Certificate

active

11194354

ABSTRACT:
A manufacturing process and a power junction field-effect transistor (JFET) are provided. The basic concept of the present invention is to allow the current to flow vertically from the drain region on the bottom side to the source region on the topside of the device. By regulating the voltage applied between the gate regions and the source region, the power junction field-effect transistor (JFET) of the present invention can be built to handle large current and higher voltage for power management purposes, as is similar to the metal oxide semiconductor field effect transistor (MOSFET).

REFERENCES:
patent: 6326317 (2001-12-01), Wang et al.

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