Manufacturing of a low-noise mos device

Details Manufacturing of a low-noise mos device Manufacturing of a low-noise mos device

2005-04-26

2005-04-26

Tran, Michael (Department: 2818)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S517000, C438S522000, C438S531000

Reexamination Certificate

active

06884703

ABSTRACT:
At the surface of a substrate a gate oxide layer is produced and is given a dual thickness. A first oxide layer is produced over the surface of a substrate by thermal oxidation and is covered by a mask layer defining suitably located openings. A material accelerating or retarding the oxidation of the substrate is ion implanted through the first oxide layer in the openings, after which the mask is removed and the thermal oxidation is continued over the now exposed total surface of the first oxide layer. The material used for ion implanting can be an oxidation rate promoting material such as chloride and bromine. The manufacturing method is simple and adds little to presently used process flows for fabricating MOS devices. The dual thickness of the gate oxide gives the manufactured MOS device a low level of total noise generated when using the device for instance in RF-circuits.

REFERENCES:
patent: 5330920 (1994-07-01), Soleimani et al.
patent: 6136674 (2000-10-01), An et al.
patent: 6335262 (2002-01-01), Crowder et al.
patent: 6734085 (2004-05-01), Cho et al.

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