Manufacturing methods of SOI substrate and semiconductor device

Details Manufacturing methods of SOI substrate and semiconductor device Manufacturing methods of SOI substrate and semiconductor device

2011-08-09

2011-08-09

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S459000, C438S406000, C438S479000, C438S481000, C257SE21561, C257SE21568, C257SE21320

Reexamination Certificate

active

07994023

ABSTRACT:
A manufacturing method of an SOI substrate and a manufacturing method of a semiconductor device are provided. When a large-area single crystalline semiconductor film is formed over an enlarged substrate having an insulating surface, e.g., a glass substrate by an SOI technique, the large-area single crystalline semiconductor film is formed without any gap between plural single crystalline semiconductor films, even when plural silicon wafers are used. An aspect of the manufacturing method includes the steps of disposing a first seed substrate over a fixing substrate; tightly arranging a plurality of single crystalline semiconductor substrates over the first seed substrate to form a second seed substrate; forming a large-area continuous single crystalline semiconductor film by an ion implantation separation method and an epitaxial growth method; forming a large-area single crystalline semiconductor film without any gap over a large glass substrate by an ion implantation separation method again.

REFERENCES:
patent: 6372609 (2002-04-01), Aga et al.
patent: 6380046 (2002-04-01), Yamazaki
patent: 6534380 (2003-03-01), Yamauchi et al.
patent: 6818529 (2004-11-01), Bachrach et al.
patent: 7112531 (2006-09-01), Srinivasan
patent: 7115481 (2006-10-01), Ghyselen et al.
patent: 7119365 (2006-10-01), Takafuji et al.
patent: 7176528 (2007-02-01), Couillard et al.
patent: 7199024 (2007-04-01), Yamazaki
patent: 7199397 (2007-04-01), Huang et al.
patent: 7456080 (2008-11-01), Gadkaree
patent: 7508034 (2009-03-01), Takafuji et al.
patent: 7605053 (2009-10-01), Couillard et al.
patent: 7608521 (2009-10-01), Cites et al.
patent: 7691730 (2010-04-01), Gadkaree et al.
patent: 2006/0084249 (2006-04-01), Yamada
patent: 2007/0173000 (2007-07-01), Yamazaki
patent: 2008/0248629 (2008-10-01), Yamazaki
patent: 64-061943 (1989-03-01), None
patent: 06-018926 (1994-01-01), None
patent: 11-163363 (1999-06-01), None
patent: 2000-012864 (2000-01-01), None
patent: 2003-068592 (2003-03-01), None
patent: 2003-324188 (2003-11-01), None
patent: 2004/025360 (2004-03-01), None
patent: 2004-134675 (2004-04-01), None

Affiliated with

Also associated with

Rating

Manufacturing methods of SOI substrate and semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing methods of SOI substrate and semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing methods of SOI substrate and semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2717329