Manufacturing methods of MEMS device

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Reexamination Certificate

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C438S050000, C257S415000

Reexamination Certificate

active

06946315

ABSTRACT:
The present invention is directed to manufacturing methods of electrostatic type MEMS devices. The manufacturing method of the present invention includes the steps of forming a substrate side electrode on a substrate, forming a fluid film before or after forming a sacrificial layer, further forming a beam having a driving side electrode on a planarized surface of the fluid film, and finally, removing the sacrificial layer. Furthermore, performing the foregoing method planarizes the surface of a driving side electrode, reduces fluctuations in the shape of a beam, and improves the performance and the uniformity of the MEMS device.

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International Search Report (English Translation).

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