Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Patent
1998-06-26
2000-02-08
Niebling, John F.
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
438158, 438160, 438949, H01L 2100, H01L 2189
Patent
active
060227532
ABSTRACT:
An ITO (indium tin oxide) layer and a negative photoresist are deposited sequentially on the substrate 100 having a gate wire, a storage wire, a data wire and a storage electrode. The negative photoresist is developed through front exposure and the ITO layer is etched to form a pixel electrode. Because the portions of negative photoresist exposed to light remain after development, pixel defects due to particles placed between pixel regions are reduced. Both the rear exposure and the front exposure may be used. In the rear exposure, it is difficult to remain the portions of the ITO layer at the positions corresponding to the contact portion of the drain electrode and the pixel electrode, the storage line, the gate pads and the data pads. Accordingly, the front exposure is then executed by using the first mask having openings thereon. The negative photoresist is developed, and the ITO layer is patterned. After etching the ITO layer, because the portion of the ITO layer outside the display region remains as a whole, the portions of the ITO layers on the gate pads and the data pads remains through front exposure using a positive photoresist.
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Lee Won-Hee
Park Woon-Yong
Lebentritt Michael S.
Niebling John F.
Samsung Electronics Co,. Ltd.
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