Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With semiconductor element forming part
Reexamination Certificate
2008-02-12
2010-12-28
Arora, Ajay K (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With semiconductor element forming part
C257S254000, C257S704000, C257SE23180, C438S106000
Reexamination Certificate
active
07859091
ABSTRACT:
A semiconductor device includes: a first substrate made of semiconductor and having first regions, which are insulated from each other and disposed in the first substrate; and a second substrate having electric conductivity and having second regions and insulation trenches. Each insulation trench penetrates the second substrate so that the second regions are insulated from each other. The first substrate provides a base substrate, and the second substrate provides a cap substrate. The second substrate is bonded to the first substrate so that a sealed space is provided between a predetermined surface region of the first substrate and the second substrate. The second regions include an extraction conductive region, which is coupled with a corresponding first region.
REFERENCES:
patent: 6228675 (2001-05-01), Ruby et al.
patent: 6777263 (2004-08-01), Gan et al.
patent: 6890834 (2005-05-01), Komobuchi et al.
patent: 6892575 (2005-05-01), Nasiri et al.
patent: 6936491 (2005-08-01), Partridge et al.
patent: 6965107 (2005-11-01), Komobuchi et al.
patent: 7045868 (2006-05-01), Ding et al.
patent: 7247246 (2007-07-01), Nasiri et al.
patent: 7560802 (2009-07-01), Kälvesten et al.
patent: 2003/0034535 (2003-02-01), Barenburg et al.
patent: 2004/0077117 (2004-04-01), Ding et al.
patent: 2004/0106294 (2004-06-01), Lee et al.
patent: 2004/0112937 (2004-06-01), Laermer
patent: 2004/0126920 (2004-07-01), An et al.
patent: 2004/0245586 (2004-12-01), Partridge et al.
patent: 2005/0023656 (2005-02-01), Leedy
patent: 2005/0095833 (2005-05-01), Lutz et al.
patent: 2005/0156260 (2005-07-01), Partridge et al.
patent: 2005/0167795 (2005-08-01), Higashi
patent: 2005/0170609 (2005-08-01), Alie et al.
patent: 2005/0255645 (2005-11-01), Lutz et al.
patent: 2005/0260783 (2005-11-01), Lutz et al.
patent: 2006/0105503 (2006-05-01), Ding et al.
patent: 2006/0216856 (2006-09-01), Zhao
patent: 2006/0216857 (2006-09-01), Zhao
patent: 2006/0273430 (2006-12-01), Hua et al.
patent: 2006/0292729 (2006-12-01), Ohguro
patent: 2009/0068795 (2009-03-01), Higashi
patent: A-4-98883 (1992-03-01), None
patent: A-10-92702 (1998-04-01), None
patent: A-2004-333133 (2004-11-01), None
patent: A-2004-333313 (2004-11-01), None
patent: A-2005-166909 (2005-06-01), None
patent: A-2005-260099 (2005-09-01), None
patent: A-2006-275660 (2006-10-01), None
patent: A-2007-150098 (2007-06-01), None
patent: WO 2005/045885 (2005-05-01), None
Office Action dated Dec. 9, 2008 in corresponding Japanese patent application No. 2007-257840 (and English translation.
“Replacement of crystal oscillator with MEMS oscillator formed by Si technique”,Nikkei Electronics, Apr. 10, 2006, pp. 128-129 (partial English translation attached).
Office Action dated Jun. 30, 2009 from the Japan Patent Office in the corresponding JP application No. 2007-257840 (and English Translation).
German Office Action issued from the German Patent Office on Jul. 5, 2010 in the corresponding German patent application No. 10 2008 000 261.5-33 (with English translation).
Court Hearing dated Jun. 29, 2010 in corresponding Japanese Application No. 2007-257840 (and English translation).
Fujii Tetsuo
Sugiura Kazuhiko
Arora Ajay K
Denso Corporation
Posz Law Group , PLC
LandOfFree
Manufacturing methods for semiconductor device with sealed cap does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Manufacturing methods for semiconductor device with sealed cap, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing methods for semiconductor device with sealed cap will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4167280