Manufacturing method which prevents abnormal gate oxidation

Details Manufacturing method which prevents abnormal gate oxidation Manufacturing method which prevents abnormal gate oxidation

2008-05-20

2008-05-20

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S591000, C438S257000, C257SE21624

Reexamination Certificate

active

11367435

ABSTRACT:
A method for manufacturing a gate electrode structure for preventing abnormal oxidation of a refractory metal due to an oxidation process, includes forming an insulating film on a surface of a semiconductor substrate; forming an impurity diffused polysilicon film on the insulating film; forming an impurity diffusion preventing film on the impurity diffused polysilicon film; forming a refractory metal silicide film on the impurity diffusion preventing film; forming a first nitride film on the refractory metal silicide film; patterning the first nitride film, the refractory metal silicide film and the impurity diffusion preventing film on a gate electrode; forming a first spacer constituted by a second nitride film on side surfaces of the first gate electrode; performing anisotropic etching on the impurity diffused polysilicon film with the first and second nitride films as a mask; and performing an oxidation process.

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