Manufacturing method which prevents abnormal gate oxidation

Details Manufacturing method which prevents abnormal gate oxidation Manufacturing method which prevents abnormal gate oxidation

2006-04-04

2006-04-04

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S287000, C438S591000

Reexamination Certificate

active

07022594

ABSTRACT:
A method for manufacturing a gate electrode structure for preventing abnormal oxidation of a refractory metal due to an oxidation process, includes forming an insulating film on a surface of a semiconductor substrate; forming an impurity diffused polysilicon film on the insulating film; forming an impurity diffusion preventing film on the impurity diffused polysilicon film; forming a silicon-based film on the impurity diffusion preventing film; forming a refractory metal on the silicon-based film; forming a nitride film on the refractory metal silicide film; patterning the impurity diffused polysilicon film, the impurity diffusion preventing film, the silicon-based film, the refractory metal silicide film and the nitride film on a gate electrode; and performing an oxidation process.

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