Manufacturing method which prevents abnormal gate oxidation

Details Manufacturing method which prevents abnormal gate oxidation Manufacturing method which prevents abnormal gate oxidation

2008-05-20

2008-05-20

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S591000, C438S257000, C257SE21624

Reexamination Certificate

active

07375015

ABSTRACT:
A method for manufacturing a gate electrode structure for preventing abnormal oxidation of a refractory metal due to an oxidation process, includes forming an insulating film on a surface of a semiconductor substrate; forming an impurity diffused polysilicon film on the insulating film; forming an impurity diffusion preventing film on the impurity diffused polysilicon film; forming a refractory metal silicide film on the impurity diffusion preventing film; forming a first nitride film on the refractory metal silicide film; patterning the first nitride film, the refractory metal silicide film and the impurity diffusion preventing film on a gate electrode; forming a first spacer constituted by a second nitride film on side surfaces of the first gate electrode; performing anisotropic etching on the impurity diffused polysilicon film with the first and second nitride films as a mask; and performing an oxidation process.

REFERENCES:
patent: 5210047 (1993-05-01), Woo et al.
patent: 5278441 (1994-01-01), Kang et al.
patent: 5872385 (1999-02-01), Taft et al.
patent: 6074922 (2000-06-01), Wang et al.
patent: 6075274 (2000-06-01), Wu et al.
patent: 6114736 (2000-09-01), Balasubramanyam et al.
patent: 6147388 (2000-11-01), Ma et al.
patent: 6208004 (2001-03-01), Cunningham
patent: 6236093 (2001-05-01), Hiura
patent: 6291868 (2001-09-01), Weimer et al.
patent: 6369418 (2002-04-01), Perng et al.
patent: 6373114 (2002-04-01), Jeng et al.
patent: 6706594 (2004-03-01), Hurley
patent: 6734055 (2004-05-01), Lin et al.
patent: 6770571 (2004-08-01), Jeng et al.
patent: 6774437 (2004-08-01), Bryant et al.
patent: 62-86865 (1987-04-01), None
patent: 8-321613 (1996-12-01), None
patent: 10-135460 (1998-05-01), None

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