Manufacturing method or an exposing method for a semiconductor d

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430312, 430313, 430311, G03C 500

Patent

active

055784224

ABSTRACT:
One object of the present invention is to provide the reduced projection exposure method which enables the exposure of various and fine patterns in manufacturing process of semiconductor devices or semiconductor integrated circuit devices. Structure of the present invention to attain the above object is to carry out the reduced projection exposure using a phase shift mask provided with a prescribed correction pattern on the end of the mask pattern domain of a constant mode or the boundary of the mask pattern domain of plural modes. According to this structure, as the end effects etc. are canceled by the correction pattern, the various and fine patterns can be exposed.

REFERENCES:
patent: 5217831 (1993-06-01), White
patent: 5229230 (1993-07-01), Kamon

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