Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-06-13
2009-02-24
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S660000, C438S669000, C438S676000, C257SE21533, C257SE21534, C257SE21535, C257SE21582
Reexamination Certificate
active
07494923
ABSTRACT:
The present invention provides a method for forming a wiring having a minute shape on a large substrate with a small number of steps, and further a wiring substrate formed by the method. Moreover, the present invention provides a semiconductor device in which cost reduction and throughput improvement are possible due to the small number of steps and reduction of materials and which has a semiconductor element with a minute structure, and further a manufacturing method thereof. According to the present invention, a composition including metal particles and organic resin is irradiated with laser light and a part of the metal particles is baked to form a conductive layer typified by a wiring, an electrode or the like over a substrate. Further, a semiconductor device having the baked conductive layer as a wiring or an electrode is formed.
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Nakamura Osamu
Yamamoto Hiroko
Cook Alex Ltd.
Estrada Michelle
Semiconductor Energy Laboratory Co,. Ltd.
Stark Jarrett J
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