Manufacturing method of wiring

Details Manufacturing method of wiring Manufacturing method of wiring

1996-10-01

1999-11-09

Chaudhari, Chandra

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Polycrystalline semiconductor

438502, C30B 3300, H01L 2120

Patent

active

059813628

ABSTRACT:
An insulating film is formed on a surface of a semiconductor substrate. Then a photoresist pattern including only one wedge-like area is formed on a surface of the insulating film. Next, a groove part is formed in the insulating film, using the photoresist pattern as a mask. Next, a titanium layer and a polycrystal-structured aluminum layer are embedded in the entire groove part. A monocrystal-structured aluminum layer is formed by heating the polycrystal-structured aluminum layer at 500 to 600.degree. C. and then cooling it down gradually. No monocrystal silicon to serve as a seed is needed in a bed. Therefore, for example, monocrystallization can be carried out even in second and third layers of multilayer wiring. This realizes a manufacturing method of wiring composed of a highly reliable monocrystal conductive film, which is widely applicable and especially appropriate to wiring of a semiconductor device.

REFERENCES:
patent: 4448632 (1984-05-01), Akasaka
patent: 5173446 (1992-12-01), Asakawa et al.
patent: 5466638 (1995-11-01), Eguchi
patent: 5629236 (1997-05-01), Wada et al.

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