Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-07-19
2011-07-19
Ngo, Ngan (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S104000, C438S151000, C438S158000, C438S159000, C438S161000, C438S479000, C438S584000, C438S585000, C438S696000, C438S706000, C438S720000, C438S722000, C438S742000, C257SE21256, C257SE21310, C257SE21370
Reexamination Certificate
active
07981734
ABSTRACT:
A manufacturing method of a thin film transistor includes forming a pair of source/drain electrodes on a substrate, such that the source/drain electrodes define a gap therebetween; forming low resistance conductive thin films, which define a gap therebetween, on the source/drain electrodes; and forming an oxide semiconductor thin film layer on upper surface of the low resistance conductive thin films and in the gap defined between the low resistance conductive thin films so that the oxide semiconductor thin film layer functions as a channel. The low resistance conductive thin films and the oxide semiconductor thin film layer are etched so that side surfaces of the resistance conductive thin films and corresponding side surfaces of the oxide semiconductor thin film layer coincide with each other in a channel width direction of the channel. A gate electrode is mounted over the oxide semiconductor thin film layer.
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Chinese Office Action dated Jul. 8, 2010 and English translation thereof in counterpart Chinese Application Chinese No. 200780000580.2.
Furuta Hiroshi
Furuta Mamoru
Hiramatsu Takahiro
Hirao Takashi
Hokari Hitoshi
Casio Computer Co. Ltd.
Holtz Holtz Goodman & Chick PC
Kochi Industrial Promotion Center
Liu Benjamin Tzu-Hung
Ngo Ngan
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