Manufacturing method of thin film transistor including...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C438S163000, C438S164000, C257SE21700

Reexamination Certificate

active

11306105

ABSTRACT:
A manufacturing method of a thin film transistor is provided. A buffer layer is formed on a substrate, and then a first and a second poly-silicon island are formed thereon. A gate-insulating layer is formed on the substrate, and a first and a second gate are formed thereon. A sacrificed layer is formed on the substrate and a photo-resist layer is formed thereon. The sacrificed layer above the first poly-silicon island is removed by using the photo-resist layer as a mask. A first ion implantation process is performed to form a first source/drain. The photo-resist layer is removed and a second ion implantation process is performed to form a second source/drain. At the same time, the second ion implantation process is used to implant ions into the buffer layer below the two sides of the second gate. A lightly-doped ion implantation process is performed after removing the sacrificed layer.

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patent: 6388291 (2002-05-01), Zhang et al.
patent: 6902961 (2005-06-01), Chang et al.
patent: 7192815 (2007-03-01), Shen
patent: 2002/0182833 (2002-12-01), Yang
patent: 2003/0134459 (2003-07-01), Tanaka et al.
patent: 2004/0229408 (2004-11-01), Chang

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