Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-03-15
2005-03-15
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S160000
Reexamination Certificate
active
06867075
ABSTRACT:
On a transparent substrate to which a gate electrode is arranged, a silicon nitride film and a silicon oxide film to be gate insulating films are deposited, and further, a polycrystalline silicon film as a semiconductor film to be an active region is formed. On the polycrystalline silicon film corresponding to the gate electrode, a stopper is arranged, and a silicon oxide film and a silicon nitride film to be an interlayer insulating films are deposited so as to cover this stopper. The film thickness T0 of the stopper is set in a range of 800 angstroms to 1200 angstroms. Furthermore, the film thickness T0 of the stopper is set in the range to fulfill the following expression:in-line-formulae description="In-line Formulae" end="lead"?T0+T1≦(T2×8000 Å)img id="CUSTOM-CHARACTER-00001" he="2.46mm" wi="1.44mm" file="US06867075-20050315-P00900.TIF" alt="custom character" img-content="character" img-format="tif" ?in-line-formulae description="In-line Formulae" end="tail"?where T1 is the film thickness of the silicon oxide film and T2 is the film thickness of the silicon nitride film.
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Nakanishi Shiro
Oda Nobuhiko
Yamada Tsutomu
Yuda Shinji
Fourson George
Toledo Fernando L.
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