Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-08-16
2011-08-16
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S719000, C438S734000, C257SE21414
Reexamination Certificate
active
07998801
ABSTRACT:
Decrease of the off-state current, increase of the on-state current, and reduction of variations of electrical characteristics. A method for manufacturing a channel-etched inversed staggered thin film transistor includes the following steps: removing, by first dry-etching, a part of a semiconductor layer including an impurity element which imparts one conductivity type, which is exposed from the source and drain electrodes, and partially a part of an amorphous semiconductor layer just below and in contact with the part of the semiconductor layer; removing, by second dry-etching, partially the part of the amorphous semiconductor layer which is exposed by the first dry-etching; and performing plasma treatment on the surface of the part of the amorphous semiconductor layer which is exposed by the second dry-etching so that an altered layer is formed.
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Kurata Motomu
Osada Sho
Sasagawa Shinya
Costellia Jeffrey L.
Lee Hsien-Ming
Nixon & Peabody LLP
Parendo Kevin
Semiconductor Energy Laboratory Co,. Ltd.
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