Manufacturing method of thin film transistor array substrate

Details Manufacturing method of thin film transistor array substrate Manufacturing method of thin film transistor array substrate

2007-02-13

2007-02-13

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S950000, C257SE21412

Reexamination Certificate

active

11463595

ABSTRACT:
A manufacturing method of thin film transistor array substrate is provided. A substrate, whereon first, second, and third poly-silicon islands, a gate insulating layer, a plurality of first, second, and third gates, and a first passivation layer have been formed, is provided. A third patterned photoresist layer is formed on the first passivation layer by using a third half-tone mask. A first ion implantation process is performed with the third patterned photoresist layer as mask to form first sources/drains. A portion of the thickness of the third patterned photoresist layer is removed, and then portions of the first passivation layer and the gate insulating layer are removed with the third patterned photoresist layer as mask to form the first patterned passivation layer. The third patterned photoresist layer is removed. First, second and third source/drain conductive layers, a second patterned passivation layer, and pixel electrodes are formed in sequence.

REFERENCES:
patent: 5953582 (1999-09-01), Yudasaka et al.
patent: 7122830 (2006-10-01), Ishikawa et al.
patent: 2003/0178650 (2003-09-01), Sonoda et al.
patent: 2004/0086807 (2004-05-01), Peng et al.

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