Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-08-09
2011-08-09
Dickey, Thomas L (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257SE21414, C439S043000
Reexamination Certificate
active
07993991
ABSTRACT:
A manufacturing method of a thin film transistor and a display device using a small number of masks is provided. A first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked. Then, a resist mask having a recessed portion is formed thereover using a multi-tone mask. First etching is performed to form a thin-film stack body, and second etching in which the thin-film stack body is side-etched is performed to form a gate electrode layer. The resist is made to recede, and then, a source electrode, a drain electrode, and the like are formed; accordingly, a thin film transistor is manufactured.
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Isa Toshiyuki
Komatsu Ryu
Komori Shigeki
Miyairi Hidekazu
Dickey Thomas L
Fish & Richardson P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Yushin Nikolay
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