Manufacturing method of thin film transistor

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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Details

C438S151000, C438S304000, C438S596000

Reexamination Certificate

active

06991973

ABSTRACT:
A method of manufacturing a thin film transistor for solving the drawbacks of the prior arts is disclosed. The method includes steps of providing an insulating substrate, sequentially forming a source/drain layer, a primary gate insulating layer, and a first conducting layer on the insulating substrate, etching the first conducting layer to form a primary gate; sequentially forming a secondary gate insulating layer and a second conducting layer on the primary gate; and etching the second conducting layer to form a first secondary gate and a second secondary gate.

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