Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-01-31
2006-01-31
Kennedy, Jennifer (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S304000, C438S596000
Reexamination Certificate
active
06991973
ABSTRACT:
A method of manufacturing a thin film transistor for solving the drawbacks of the prior arts is disclosed. The method includes steps of providing an insulating substrate, sequentially forming a source/drain layer, a primary gate insulating layer, and a first conducting layer on the insulating substrate, etching the first conducting layer to form a primary gate; sequentially forming a secondary gate insulating layer and a second conducting layer on the primary gate; and etching the second conducting layer to form a first secondary gate and a second secondary gate.
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Chang Kow Ming
Chung Yuan Hung
Haverstock & Owens LLP
Kennedy Jennifer
National Chiao Tung University
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