Manufacturing method of thin film semiconductor device

Details Manufacturing method of thin film semiconductor device Manufacturing method of thin film semiconductor device

1996-05-10

1999-10-05

Chaudhari, Chandra

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

438479, H01L 2126

Patent

active

059638230

ABSTRACT:
A microwave is applied, in an atmosphere that prohibits formation of plasma, to an amorphous silicon film that has been formed on a glass substrate by a vapor phase method. Since the microwave is absorbed selectively by a surface layer of the amorphous silicon film due to the skin effect, the amorphous silicon film can be heated selectively and thereby modified into a crystalline silicon film without heating the glass substrate.

REFERENCES:
patent: 4778666 (1988-10-01), Chu et al.
patent: 5424244 (1995-06-01), Zhang et al.
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5624873 (1997-04-01), Fonash et al.
patent: 5663077 (1997-09-01), Adachi et al.

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