Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2008-09-17
2009-12-29
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S459000, C438S455000, C438S458000, C257SE21567
Reexamination Certificate
active
07638408
ABSTRACT:
A plurality of rectangular single crystal semiconductor substrates are prepared. Each of the single crystal semiconductor substrates is doped with hydrogen ions and a damaged region is formed at a desired depth, and a bonding layer is formed on a surface thereof. The plurality of single crystal substrates with the damaged regions formed therein and the bonding layers formed thereover are arranged on a tray. Depression portions for holding the single crystal semiconductor substrates are formed in the tray. With the single crystal semiconductor substrates arranged on the tray, the plurality of single crystal semiconductor substrates with the damaged regions formed therein and the bonding layers formed thereover are bonded to a base substrate. By performing heat treatment and dividing the single crystal semiconductor substrates along the damaged regions, the plurality of single crystal semiconductor layers that are sliced are formed over the base substrate.
REFERENCES:
patent: 5374564 (1994-12-01), Bruel
patent: 6140210 (2000-10-01), Aga et al.
patent: 6146979 (2000-11-01), Henley et al.
patent: 6159824 (2000-12-01), Henley et al.
patent: 6287941 (2001-09-01), Kang et al.
patent: 6653209 (2003-11-01), Yamagata
patent: 6759277 (2004-07-01), Flores et al.
patent: 6818529 (2004-11-01), Bachrach et al.
patent: 6884694 (2005-04-01), Park et al.
patent: 7119365 (2006-10-01), Takafuji et al.
patent: RE39484 (2007-02-01), Bruel
patent: 7354844 (2008-04-01), Endo et al.
patent: 2004/0238851 (2004-12-01), Flores et al.
patent: 2005/0032283 (2005-02-01), Itoga et al.
patent: 2007/0034157 (2007-02-01), Nakata et al.
patent: 2007/0063281 (2007-03-01), Takafuji et al.
patent: 2008/0063840 (2008-03-01), Morita et al.
patent: 2008/0254560 (2008-10-01), Yamazaki
patent: 05-211128 (1993-08-01), None
patent: 2003-257804 (2003-09-01), None
patent: WO 2004/025360 (2004-03-01), None
Sullivan et al., “P-220L: Late-News Poster: Layer-Transfer of Silicon Single-Crystal Films on Large-Area Glass Substrates for Mobile Display Applications,” SID 06 Digest, Jun. 2006, pp. 280-282.
Furuno Makoto
Yamazaki Shunpei
Ghyka Alexander G
Nikmanesh Seahvosh J
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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