Manufacturing method of silicon carbide single crystals

Details Manufacturing method of silicon carbide single crystals Manufacturing method of silicon carbide single crystals

2006-12-12

2006-12-12

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

C117S088000, C117S103000, C117S906000, C117S951000

Reexamination Certificate

active

07147714

ABSTRACT:
When a SiC substrate is heated up to around 1800°C., sublimation of SiC occurs from the SiC substrate. Moreover, temperature of the front surface of the SiC substrate is lower than that of the back surface of the SiC substrate. Therefore, sublimation gas sublimed from a back-surface vicinity of the substrate, where temperature is high, moves to a front-surface vicinity of the substrate, where temperature is low, through the hollow micro-pipe defect. Epitaxial growth proceeds on the front surface of the substrate while the sublimation gas is recrystallized at the front-surface vicinity of the substrate, so that the micro-pipe defect is occluded.

REFERENCES:
patent: 4912063 (1990-03-01), Davis et al.
patent: 5679153 (1997-10-01), Dmitriev et al.
patent: 5944890 (1999-08-01), Kitou et al.
patent: 6153165 (2000-11-01), Tanino et al.
patent: 6153166 (2000-11-01), Tanino
patent: 6187279 (2001-02-01), Tanino et al.
patent: 6203772 (2001-03-01), Tanino et al.
patent: 6214108 (2001-04-01), Okamoto et al.
patent: 6660084 (2003-12-01), Shiomi et al.
patent: 6746787 (2004-06-01), Naito et al.
patent: 6780243 (2004-08-01), Wang et al.
patent: 0916749 (1999-05-01), None
patent: A-H10-036194 (1998-02-01), None
patent: A-H10-261615 (1998-09-01), None
patent: A-2000-34198 (2000-02-01), None
Kamata et al., “Migration of shifting in epitaxial growth of thick 4H-SiC,”Abstract of the Lecture of 47thJapan Society of Applied Physics Related Association, separate vol. 1, p. 407, No. 29p-YF-6, Mar. 2000. (Discussed on p. 2 of the spec.).
Search Report dated Jul. 5, 2006 from European Patent Office for counterpart application of 01129641.5-2122.
Yakimova R. et al, “Current status and advances in the growth of Sic,” Diamond and Related Materials, Elsevier Science Publishers, vol. 9, No. 3-6, Apr. 2000, pp. 432-438.
Tsuchida H et al., “LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers,” Materials Science Forum, vol. 338-342, Mar. 2000, pp. 145-148.
Rowell J A et al., “Process-Induced Morphological Defects in Epitaxial CVD Silicon Carbide,” Physica Status Solidi B, vol. 202, Jul. 1997, pp. 529-548.
Carter Jr. et al., “Progress in SiC: from material growth to commercial device development,” Materials Science and Engineering B, Elsevier Science Publishers, vol. 61-62, Jul. 1999, pp. 1-8.
A. Ellison et al., “Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments,” Materials Science Forum, vol. 338-342, Mar. 2000, pp. 131-136.
Saddow S E et al., “Silicon carbide CVD homoepitaxy on wafers with reduced microscope density,” Materials Science and Engineering B, Elsevier Science Publishers, vol. 61-62, Jul. 1999, pp. 158-160.

Affiliated with

Also associated with

Rating

Manufacturing method of silicon carbide single crystals does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of silicon carbide single crystals, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of silicon carbide single crystals will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3688520