Manufacturing method of silicon carbide semiconductor apparatus

Details Manufacturing method of silicon carbide semiconductor apparatus Manufacturing method of silicon carbide semiconductor apparatus

2008-07-14

2011-10-18

Duda, Kathleen (Department: 1722)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S312000

Reexamination Certificate

active

08039204

ABSTRACT:
A manufacturing method of a silicon carbide semiconductor apparatus is provided. The method includes forming a first resist pattern on a surface of a silicon carbide layer formed on a silicon carbide substrate, implanting a first conduction type impurity ion in the silicon carbide layer on which the first resist pattern is formed, forming a second resist pattern by decreasing a width of the first resist pattern with etching and forming a deposition layer on the surface of the silicon carbide layer which is not covered with the second resist pattern, and implanting a second conduction type impurity ion in the silicon carbide layer on which the second resist pattern is formed, through the deposition layer.

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patent: 6566178 (2003-05-01), Shih
patent: 2006/0220027 (2006-10-01), Takahashi et al.
patent: 2001-068428 (2001-03-01), None
patent: 2002-343810 (2002-11-01), None
patent: 2006-128191 (2006-05-01), None

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