Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-03-24
2009-12-22
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S455000, C257SE21561
Reexamination Certificate
active
07635617
ABSTRACT:
In a process of forming a single-crystalline semiconductor layer bonded to a glass substrate by low-temperature heat treatment, before a bonding and separation step in which the single-crystalline semiconductor layer is bonded to the glass substrate, the glass substrate is heated at a temperature higher than a heat temperature in the bonding and separation step. In a bonding step between the single-crystalline semiconductor layer and the glass substrate, the single-crystalline semiconductor layer is heated at a temperature close to a strain point of the glass substrate, specifically at a temperature in a range from minus 50° C. to plus 50° C. of a strain point. Accordingly, the glass substrate is subjected to heat treatment in advance at a temperature higher than the temperature close to the strain point, specifically, at a temperature higher than the temperature in a range from minus 50° C. to plus 50° C. of the strain point.
REFERENCES:
patent: 5236850 (1993-08-01), Zhang
patent: 5254208 (1993-10-01), Zhang
patent: 5374564 (1994-12-01), Bruel
patent: 5492843 (1996-02-01), Adachi et al.
patent: 5837619 (1998-11-01), Adachi et al.
patent: 5876497 (1999-03-01), Atoji
patent: 6008076 (1999-12-01), Codama et al.
patent: 6103009 (2000-08-01), Atoji
patent: 6127702 (2000-10-01), Yamazaki et al.
patent: 6271101 (2001-08-01), Fukunaga
patent: 6335231 (2002-01-01), Yamazaki et al.
patent: 6380046 (2002-04-01), Yamazaki
patent: 6388652 (2002-05-01), Yamazaki et al.
patent: 6479334 (2002-11-01), Codama et al.
patent: 6602761 (2003-08-01), Fukunaga
patent: 6686623 (2004-02-01), Yamazaki
patent: 6778164 (2004-08-01), Yamazaki et al.
patent: 6803264 (2004-10-01), Yamazaki et al.
patent: 6875633 (2005-04-01), Fukunaga
patent: 6908797 (2005-06-01), Takano
patent: 7119365 (2006-10-01), Takafuji et al.
patent: 7176525 (2007-02-01), Fukunaga
patent: 7199024 (2007-04-01), Yamazaki
patent: 7256776 (2007-08-01), Yamazaki et al.
patent: 2004/0104424 (2004-06-01), Yamazaki
patent: 2005/0009252 (2005-01-01), Yamazaki et al.
patent: 2005/0260800 (2005-11-01), Takano
patent: 2007/0063281 (2007-03-01), Takafuji et al.
patent: 2007/0087488 (2007-04-01), Moriwaka
patent: 2007/0108510 (2007-05-01), Fukunaga
patent: 2007/0173000 (2007-07-01), Yamazaki
patent: 2007/0184632 (2007-08-01), Yamazaki et al.
patent: 2007/0281440 (2007-12-01), Cites et al.
patent: 2007/0291022 (2007-12-01), Yamazaki et al.
patent: 2008/0246109 (2008-10-01), Ohnuma et al.
patent: 02-054532 (1990-02-01), None
patent: 11-163363 (1999-06-01), None
patent: 2004-87606 (2004-03-01), None
Booth Richard A.
Fish & Richardson P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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