Manufacturing method of semiconductor substrate

Details Manufacturing method of semiconductor substrate Manufacturing method of semiconductor substrate

2005-02-08

2005-02-08

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Self-aligned

C438S198000

Reexamination Certificate

active

06852604

ABSTRACT:
A manufacturing method of a semiconductor substrate comprising the steps of: (a) forming a SiGe layer on a substrate of which the surface is made of silicon; (b) further forming a semiconductor layer on the SiGe layer; and (c) implanting ions into regions of the SiGe layer in the substrate that become element isolation formation regions, and carrying out a heat treatment.

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S. Wolf, Silicon Processing for the VLSI Era, vol. 2, Lattice Press, Calif., pp. 419-426.*
Welser et al., Strain Dependence of the Performance Enhancement in Strained-Si n-MOSFETs:, IEDM 94 (IEEE), pp. 373-376.
Hargrove et al., “Quantum Mechanical Modeling of the Charge Distribution in a Si/Si1-xGex/Si P-Channel MOSFET”, IEDM 94 (IEEE), pp. 735-738.

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