Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-02
2009-12-29
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE23008, C438S149000
Reexamination Certificate
active
07638844
ABSTRACT:
A single-crystal silicon region on insulator on silicon intended to receive at least one component, the insulator having overthicknesses.
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French Search Report from French Patent Application 03/50665 filed Oct. 9, 2003.
Coronel Philippe
Fenouillett-Beranger Claire
Halimaoui Aomar
Lenoble Damien
Monfray Stéphane
Coleman W. David
Commissariat à l'énergie atomique
Jorgenson Lisa K.
Morris James H.
STMicroelectronics S.A.
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