Manufacturing method of semiconductor laser with non-absorbing m

Details Manufacturing method of semiconductor laser with non-absorbing m Manufacturing method of semiconductor laser with non-absorbing m

1990-11-29

1993-01-19

Scott, Jr., Leon

Coherent light generators

Particular active media

Semiconductor

372 46, 372 48, H01S 319

Patent

active

051812185

ABSTRACT:
An InGaAlP NAM structure laser is formed with a double-heterostructure section disposed on an n-type GaAs substrate. The double-heterostructure section includes a first cladding layer of n-type InGaAlP, a non-doped InGaP active layer, and a second cladding layer of p-type InGaAlP. An n-type GaAs current-blocking layer having a stripe opening and a p-type GaAs contact layer are sequentially formed on the second cladding layer by MOCVD crystal growth. A low-energy band gap region is defined in a central region of the active layer located immediately below the stripe opening. A high-energy band gap region is defined in a peripheral region of the active layer corresponding to a light output end portion of the laser and located immediately below the current-blocking layer. Therefore, self absorption of an oscillated laser beam at the output end portion can be reduced or prevented.

REFERENCES:
patent: 4340966 (1982-07-01), Ahiba et al.
patent: 4355396 (1982-10-01), Hawrylo et al.
patent: 4480331 (1984-10-01), Thompson
patent: 4737962 (1988-04-01), Yamamoto et al.
patent: 4788689 (1988-11-01), Tokuda et al.
patent: 4792958 (1988-12-01), Ohba et al.
patent: 4799228 (1989-01-01), Nagasaka et al.
patent: 4809287 (1989-02-01), Ohba et al.
patent: 4821278 (1989-04-01), Yang et al.
patent: 4835117 (1989-05-01), Ohba et al.
patent: 4893313 (1990-01-01), Hatakoshi et al.
patent: 4910743 (1990-03-01), Ohba et al.
patent: 4922499 (1990-05-01), Nitta et al.
patent: 4928285 (1990-05-01), Kushibe et al.
patent: 4941146 (1990-07-01), Kobayashi
patent: 4949349 (1990-08-01), Ohba et al.
patent: 4987096 (1991-01-01), Ishikawa
Patent Abstracts of Japan, vol. 12, No. 357 (E-662), 26th Sep. 1988; & JP-A-63 114 287 (Seiko Epson Corp.) 19-05-1988.
Electronics Letters, vol. 23, No. 8, Aug. 1987, pp. 938-939, Stevenage, Herts, GB; H. Fujii et al.: "High-power operation of a traverse-mode stabilised AlGalnP visible light (gammal=683 nm) semiconductor laser".
Conference Digest of the 11th International Semiconductor Laser Conference, Boston, Ma., Aug. 29th-Sep. 1st 1988, pp. 62-63, M. Ishikawa et al., "Highly reliable InGaP/InGaAIP visible inner stripe lasers with 667nm lasing wavelength".
Japanese Journal of Applied Physics, vol. 24, No. 8, "AlGaAs Window Stripe Buried Multiquantum Well Lasers", Nakashima et al., pp. L647-L649, Aug. 1985.
IEEE Journal of Quantum Electronics, vol. QE-15, No. 8, "An AlGaAs Window Structure Laser", Yonezu et al., pp. 775-781, Aug. 1979.

Affiliated with

Also associated with

Rating

Manufacturing method of semiconductor laser with non-absorbing m does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of semiconductor laser with non-absorbing m, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of semiconductor laser with non-absorbing m will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-106120