Manufacturing method of semiconductor integrated circuit device

Details Manufacturing method of semiconductor integrated circuit device Manufacturing method of semiconductor integrated circuit device

2006-02-21

2006-02-21

Duda, Kathleen (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S394000, C430S396000

Reexamination Certificate

active

07001712

ABSTRACT:
Densely disposed patterns constituting a semiconductor integrated circuit device are divided into a first mask pattern and a second mask pattern28B such that a phase shifter S can be disposed, and a predetermined pattern is transferred on a semiconductor substrate by multiple-exposure thereof. The second mask pattern28B has a main light transferring pattern26c1, a plurality of auxiliary light transferring patterns26c2disposed thereabout, and a phase shifter S disposed in the main light transferring pattern26c1. The auxiliary light transferring patterns26c2are disposed such that respective distances from a center of each thereof to a center of the main light transferring pattern26c1are substantially equal. With this arrangement, a densely disposed pattern is transferred with sufficient process transfer margin.

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